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| SMD Type Silicon Epitaxial Trench Pin Diode HVC135 Diodes SOD-523 +0.05 0.3-0.05 +0.1 1.2-0.1 Unit: mm +0.1 0.6-0.1 Adopting the trench structure improves low capacitance.(C=0.6pF max) Low forward resistance. (rf=2.0 Low operation current. 0.07max +0.05 0.1-0.02 max) +0.05 0.8-0.05 Features + - +0.1 1.6-0.1 0.77max A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r P e a k re v e rs e v o lta g e R e v e rs e v o lta g e F o rw a rd c u rre n t P o w e r d is s ip a tio n J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re S ym bol V RM VR IF Pd Tj T s tg V a lu e 65 60 100 150 125 -5 5 to + 1 2 5 U n it V V mA mW Electrical Characteristics Ta = 25 Param eter Reverse current Reverse voltage Capacitance Forward resistance ESD-Capability *1 Note 1. Failure criterion ; IR > 100 nA at VR = 60V. Sym bol IR VF C rf Conditions VR = 60 V IF = 2 m A VR = 1 V, f = 1 MHz IF = 2 m A, f = 100 MHz C =200pF, Both forward and reverse direction 1 pulse 100 Min Typ Max 0.1 0.9 0.6 2.0 V Unit A V pF Marking Marking P5 www.kexin.com.cn 1 |
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